Abstract
Operation of silicon avalanche detectors based on a Metal-Resistive layer-Semiconductor (MRS) structure is presented. Results refer to a new batch of detectors fabricated on a n-type substrate especially made to be used as light detecting elements of a scintillating fiber detector for high energy physics applications. These detectors are meant for weak light fluxes in the range 200–600 nm (called UV MRS). Measurements of gain, noise and quantum efficiency were performed and operation of the detector at different temperatures was also studied.
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