Abstract
In this article, the authors proposed an alternative method to improve the magnetoresistance (MR) by inserting a thin ferromagnetic (FM) layer in the nonmagnetic (NM) spacer of a basic spin valve (SV) trilayer structure (FM-NM-FM), thus creating a pentalayer structure. It is found that MR value can be doubled by inserting a FM layer with high intrinsic spin polarization, such as halfmetallic CrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> .
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