Abstract
In this study, the fabrication process of high-aspect-ratio PZT (Pb[Zr_xTi_<1-x>]O_3) structures is developed using nanocomposite sol-gel method with Si molds for a laterally actuated piezoelectric MEMS (Micro electro-mechanical Systems) switch. Deep Si trenches were conformally coated with thin Al_2O_3 and Pt films as a diffusion barrier of PZT and side wall electrodes by atomic layer deposition and electroless plating, respectively. Then, PZT was filled in the Si trenches as a piezoelectric material using nanocomposite sol-gel method. As a result, a dense, crack-free composite PZT is successfully filled into the high-aspect-ratio Si trenches. This composite PZT showed a pure perovskite phase without pyrochlore phase. The remnant polarization (P_r) and the coercive field (E_c) measured 11.7μC/cm^2 and 71.2kV/cm, respectively.
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