Abstract
The growth of ZnSe by metalorganic chemical vapor epitaxy (MOVPE) has been investigated for allyl-based Se precursors, diallyl selenide (DASe) and methyallyl selenide (MASe), combined with dimethylzinc (DMZn). The allyl selenide compounds are shown to reduce the growth temperature relative to that needed with diethylselenide. The surface morphology of the grown films is a strong function of growth temperature and VI/II ratio. The films are highly resistive and secondary ion mass spectroscopy (SIMS) data show increasing carbon incorporation with VI/II ratio. Observed carbon incorporation levels are highest for growth with MASe. The results are interpreted in terms of competing homolysis and intramolecular decomposition pathways.
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