Abstract
Abstract We report on MOVPE growth of In(GaAs)P/InGaAs multi-quantum-well (MQW) structures. The growth was carried out at a reactor pressure of 20 hPa in an horizontal lamp heated cold wall reactor with rectangular inner liner tube using as group III elements TMIn and TMGa and as group V elements 100% AsH3 and PH3. Wedge transmission electron microscopy (WTEM), photoluminescence (PL) measurements at 2K and 300 K, and X-ray double crystal diffractometry (DCD) were used for characterization. WTEM technique demonstrates monolayer interfaces and an excellent periodicity of the structures. This is in addition proven by DCD measurements with satellite peaks up to the 8th order. Separate confinement MQW (SCMQW) laser structures with InGaAsP barriers were grown and fabricated to Broad Area (BA) lasers. As a best value we measured threshold current densities of 800 A/cm2. A graded refractive index separate confinement heterostructure (GRINSCH) MQW laser structure with 7 InGaAsP grading layers was also grown and showed very homogeneous laser results with a 20% increased quantum efficiency as compared to SCMQW structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
