MOVPE of GaAs from the new adducts [ CIR2Ga · AsEt2] 2CH2 ( R = Me, Et) and ( C6F5) 3 − nMenGa · AsEt3 ( n = 0, 2)

Abstract

Some new results on GaAs growth MOCVD using original Lewis acid-base adducts are reported in this paper. Among the two series of compounds mentioned in the title, the coordination complexes ( C 6 F 5) Me 2 Ga. AsEt 3 and [ ClEt 2 Ga· AsEt 2] 2 CH 2 have given good GaAs epitaxial layers. With the first adduct, epilayers were obtained on (111) GaAs between 600 and 700°C with a growth rate about 0.45 μm/h. The second derivative gave a GaAs epitaxial growth on GaAs and Ge substrates in the temperature range 500–625°C. The deposition rate seems kinetically limited below 600°C by surface reactions. All these results are discussed in relation to the physico-chemical properties and the thermal decomposition of these adducts as well as our previous work on the chemical mechanisms.