Abstract
A new MOVPE-like hydride vapor-phase epitaxy (HVPE) using AlCl 3 solid source is proposed for growing thick and high-quality AlN layers. For the new system, a high-purity AlCl 3 (5 N grade) powder was produced. AlN epitaxial layers were characterized by X-ray diffraction (XRD) and optical absorption measurement. Also, impurities such as oxygen and carbon in the epitaxial layer were analyzed comparing to the conventional HVPE system using Al metal and HCl gas. It is shown that the new HVPE system can be applied to mass production, because the Al-precursor can be transported to the reactor as vapor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
