Abstract
BGaN materials with good structural quality and surface morphology have been successfully grown on GaN template substrates by low pressure metal organic vapour phase epitaxy . TEB and NH3 were used as precursors of boron and nitrogen respectively. All the growths were performed under 100% N 2 process gas. Boron concentration was estimated by HRXD measurements combined with SIMS analysis. Single-crystal layers of BGaN with B content as high as 3.6% have been obtained.
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