Abstract
A series of Mg-doped thick InGaN layers with different Cp2Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties of InGaN:Mg was investigated through capacitance–voltage (C–V) measurements and temperature-resolved photoluminescence (PL). After annealing, p-type conductivity with acceptor concentrations about 3.5×1018cm−3 and 9.5×1017cm−3 were observed for the samples doped with little Cp2Mg. With the highest Cp2Mg flow, an inversion from p-type to n-type was observed by analysis of a Mott–Schottky (M–S) plot. The inversion of conductivity type was accompanied by a disappearance of InGaN band-to-band PL emission. It should be noted that annealing led to a substantial reduction of this band intensity. Thus, too high Mg doping is found to cause a strong compensation of p-type conductivity by nonradiative defects of n-type as it is seen from C–V and PL measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
