Abstract

Metal-organic vapor-phase epitaxy (MOVPE) at atmospheric pressure has been used to grow ZnS x Se 1− x epitaxial layers on (1 0 0)GaAs substrates. Ditertiarybutylselenium (DTBSe), tertiarybutylmercaptan (t-BuSH) and dimethylzinc triethylamine (DMZn : Et3N) were used as the selenium, sulfur, and zinc sources, respectively. The dependence of the composition of the ZnS x Se 1− x films on the partial pressures ratios R VI = p S/( p S + p Se) and R IV/II = ( p S + p Se)/ p Zn was investigated. The conditions for growing ZnS x Se 1− x alloy with x = 0.07 (lattice matched on GaAs) were therefore determined. In addition, the growth of ZnS x Se 1− x /ZnSe quantum wells was investigated. The structural characterization data show a strong dependence on the growth conditions. Excellent layer quality with sharp PL peaks and low values of the X-ray rocking curve width for x around 0.07 was obtained. A very intense and sharp (FWHM = 2 meV) PL emission was obtained for a ZnS 0.08Se 0.92/ZnSe quantum well with a 10 nm thick well.

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