Abstract
We report on the growth of semipolar (112¯2) AlN by metal-organic vapor phase epitaxy on (101¯0) sapphire. High temperature nitridation and nucleation at a V/III ratio of 1050 provide single phase (112¯2) AlN with mirror like crack free surfaces, even for layer thicknesses larger than 1μm. Increasing reactor pressure results in lower growth rates because of gas phase particle formation. The in-plane relationship is [0001]Sap.∥[1¯1¯23]AlN and [12¯10]Sap.∥[11¯00]AlN and therewith similar to MBE grown AlN and MOVPE and HVPE grown GaN on m-plane sapphire. The (112¯2) AlN reflex is anisotropically broadened in XRD. The surface shows an undulation along [11¯00] as typical for (112¯2) oriented nitride epilayers. Transmission spectroscopy measurements exhibit a sharp absorption edge at 5.95eV, which is 130meV shifted towards lower energies compared to c-plane AlN.
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