Abstract
We have successfully grown InGaAsP/InP-based vertical-cavity structures with precisely adjusted resonant-cavity wavelengths by metalorganic vapor phase epitaxy (MOVPE). These structures have been used to create vertical-cavity surface emitting lasers (VCSELs) that emit exactly 1.55 μm through wafer fusing to GaAs/AlAs distributed Bragg reflectors (DBRs). With such growths, high lateral uniformity and reproducibility in InGaAsP layer thickness and composition are essential to obtain well-defined resonant cavity and MQW PL peak wavelengths.
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