Abstract
AbstractGaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cross-hatches, a much narrower x-ray diffraction linewidth, and a significantly higher photoluminescence(PL) intensity.
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