Abstract
Abstract The effects of slight misorientation from a (0001) singular plane on sapphire (α-Al 2 O 3 ) substrates on the surface morphology and luminescence properties of MOVPE-grown GaN films have been studied. Macrostep morphology with periodic terraces (singular plane) and risers (clustered steps) has been observed for the first time on epitaxial GaN films grown on 3°–10° misoriented sapphire substrates toward both the [ 1 0 1 ¯ 0 ] sapphire and [ 1 2 ¯ 1 0 ] sapphire directions. In addition, it is found that the macrostep causes inhomogeneity of cathodoluminescence (CL) and electroluminescence (EL) patterns in Zn-doped GaN films, suggesting that the Zn-luminescence center formation depends on the growth planes of the terrace and riser.
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