Abstract
The compressivelystrained quantum wells, tensilestrained quantum wells and the combination of tensilestrained and compressivelystrained quantum wells were grown by metal organic vapor phase epitaxy, the materials properties were meas ured by photoluminescence spectra and x-ray doublecrystal diffraction. A polarizationinsensitive multiplequantumwell optical amplifier for 1310nm wavelength employing both compressively strained wells and tensilestrained wells in active region is reported. The amplifier was fabricated to ridge waveguide structure with 7° tilted cavity, the two facets were coated with antireflection thin films. The amplifier exhibited an excellent polarization insensitivity (less than 0.6dB) over the entire range of wavelength (1.28-1.34μm) and a fiber to fiber gain of 21.5B at bias current of 200mA.
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