Abstract
AbstractZnCdSe/ZnSSe MQW structures for an electron beam pumped VCSEL with resonant periodic gain were grown by MOVPE at 425–470 °C. Strong contamination of the structure by Ga from a GaAs substrate was found and its effect on the growth rate and photoluminescence characteristics was studied. A protective thin ZnSSe layer deposited at lower temperature (350 °C) or thin layers of ZnS and ZnS/ZnSSe SL grown at temperature 425–470 °C prevent Ga penetration and allowed improving the quality and periodicity of the structure. Based on the grown MQW structure, green VCSEL was fabricated. Lasing at 542 nm with 3 W output power was achieved at RT and 40 keV. The threshold was as low as 8 A/cm2. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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