Abstract
Epitaxial layers of CuAlxGa1−xS2 and CuGa(SxSe1−x)2 including end materials of CuAlS2, CuGaS2 and CuGaSe2 have been successfully grown on GaP and GaAs substrates for the first time by MOVPE. It has been found that the growth orientation of CuGa(SxSe1−x)2 is strongly influenced by the composition-dependent lattice mismatch with the substrates; e.g., on the GaP(100) substrate the layers with higher S-composition are oriented toward 〈001〉of the chalcopyrite crystal, while the layers with lower S-composition toward 〈100〉. The CuAlS2 layers on GaP(100) have exhibited an emission band around 3.39 eV at 77 K for the first time in the band edge region of this compound.
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