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Abstract
Atmospheric pressure MOVPE has been used to prepare AlGaAs/GaAs MQW pin diodes exhibiting well-resolved room temperature exciton resonances and large reverse field breakdowns. The MQW i regions have been optimised by applying growth conditions which minimised the residual carbon concentration associated with the reagent TMA. Diodes with MQWs of well width 40 to 160 Å have been assessed for the quantum confined Stark effect (QCSE) by photocurrent spectra and as absorption modulators. A 75 period 50 Å Al0.3Ga0.7As/60 Å GaAs i region gave a transmission change of 20% at 828 nm for 16 V applied bias. Diodes have also characterised for hole and electron ionisation rates when biased as avalanche detectors. An electron-to-hole ionisation rate ratio enhancement of 14 was observed for a 45 period 58 Å Al0.3Ga0.7As/105 Å GaAs MQW.
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