Abstract
We have successfully obtained a metalorganic vapor phase epitaxy (MOVPE) grown GaInAsP/GaInAsP separate confinement heterostructure structure multi-quantum well (SCH-MQW) laser diode (LD) on a directly InP/Si substrate. InP/Si substrate was prepared by the hydrophilic bonding of a thin InP film (1 µm) and silicon substrate with annealing at 400 °C. After crystal growth of the SCH-MQW laser structure on the InP/Si substrate, the surface was mirror-like and without any cross hatches or dislocations. Room temperature pulsed current lasing was then achieved using a Fabry-Perot cavity LD with a threshold current density of 2.85 kA/cm2.
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