Motif of misfit layer compounds (SnS) xTS 2 (T=Ti, V, Nb, Ta) in the matrix of SnS 2

Abstract

The possibility of T (T=Ti, V, Nb, Ta) insertion in the layer matrix of SnS 2 (when T≪Sn) presents a special case of intercalation for the specific interactions that are inherent in the misfit layer compounds (SnS) x TS 2 ( x≈1). FT Raman spectra of T x SnS 2 (T=Ti, V) with x≪1 testify to the SnS 2 matrix that is invariable with respect to a charge transfer from T to SnS 2 layers as compared with the pristine SnS 2. At the same time the T x SnS 2 structure ( x≪1) taken as a whole has substantial features in the UV–IR spectra as compared with the pristine SnS 2 but is still a semiconductor at least in the case of T=Ti. This points out in the cluster manner of TS 2 insertion in the matrix of SnS 2 with the interactions that are typical of the misfit layer compounds (SnS) x TS 2 in which metallic conductivity occurs in the TS 2 layers.