MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation.

Geun Yeol Bae,Eunho Lee,Siyoung Lee,Junyoung Kim,Jinsung Kim

doi:10.3390/nano11112805

Abstract

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs’ surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T′) molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V−1s−1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

Highlights

Two-dimensional (2D) materials have received much attention owing to their unique physical, chemical, and electronic properties [1,2,3,4,5]
Fermi level is often found to be metastable [12,13,14,15,16,17,18]. When this phase is used in fieldeffect transistors (FETs), the semiconducting layer comprises a single layer or a few layers and has a covalently bonded lattice, where all charge carriers are confined in an atomically thin channel path, resulting in excellent gate tunability and a high on/off current ratio (Ion /Ioff )
We developed a facile method for phase tuning from 2H to 1T0 MoTe2 by laser irradiation

Summary

Introduction

Two-dimensional (2D) materials have received much attention owing to their unique physical, chemical, and electronic properties [1,2,3,4,5]. Fermi level is often found to be metastable [12,13,14,15,16,17,18] When this phase is used in FETs, the semiconducting layer comprises a single layer or a few layers and has a covalently bonded lattice, where all charge carriers are confined in an atomically thin channel path, resulting in excellent gate tunability and a high on/off current ratio (Ion /Ioff ). It has significant potential in the optimal scaling of transistors for single-atom devices. Thin-film tellurides, such as MoTe2 and WTe2 , feature the most optimized electronic features, including superconductivity, quantum spin

Methods

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Conclusion