MOSFETs-only sub-1-V voltage references for ultra-low-power applications

Abstract

Two sub-1-V MOSFETs only voltage reference designs, working in subthreshold region are proposed. They consume ultra-low power, exhibit high temperature and supply voltage independence, operate at sub-1-V supply and are suitable for fabrication using N-well CMOS technology. A voltage reference circuit (circuit-1) with dual-threshold voltage MOSFETs, which can provide a nominal output voltage of 554 mV exhibiting high temperature-compensation is proposed. Simulation results show that it has a temperature coeffcient of $$13\,\hbox {ppm}/^{\circ }\hbox {C}$$ and a power consumption of 2.1 nW. Another reference circuit (circuit-2) using only single threshold voltage MOSFETs with a high nominal output of 773 mV is also proposed. Simulation results show that it has a line sensitivity of 0.073%/V and a power consumption of 2.4 nW. Statistical analysis based on Monte-Carlo simulation show that the performance of both the circuits will not be significantly affected by process variations.