MOSFET subthreshold compact modeling with effective gate overdrive

Abstract

In this work, a previously-proposed one-region MOSFET drain current (Id.) model is improved in the subthreshold modeling. The compact model is derived based on a first-principle drift-diffusion formulation with the correct drift and diffusion currents in strong inversion and subthreshold, respectively. The new model has only one fitting parameter for subthreshold slope and can ensure excellent continuity with smooth transition from subthreshold to strong-inversion regimes, including the moderate-inversion region of growing importance for low-voltage and low-power circuits.