Abstract
This paper presents original designs of pressure sensor combining thin membrane micro-technology with a simple MOSFET (Metal Oxide Silicon Field Effect Transistor) detection. The proposed microelectronic process (fig. 1) is quite simple and could lead to the development of low pressure sensor. The sensor designs are based on square and cross shaped P-channel MOSFET directly integrated on the diaphragm. Electrical characterization of the FET-sensor shows wide drift of the characteristics in response to mechanical strain on the membrane. The shift importance is shown to depend on the different designs used to fabricate the FET-sensors.
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