Abstract
The electrical characteristics of TaN/HfO2/GaAs MOS capacitors with various interface passivation layers (Si, Ge and SiGe IPLs) under various PDA (post-deposition anneal), PMA (post-metal anneals) and process conditions are presented. High-k GaAs MOSFETs with reasonable electrical characteristics (i.e. thin EOT (< 2nm), low frequency dispersion (<5%) and peak mobility (1218 cm2/V-s) have been obtained.
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