Abstract

The present study provides a multi-scale investigation of the crystalline quality and the structural defects present in heteroepitaxial diamond films grown on iridium/SrTiO3 (001) substrates by microwave plasma assisted chemical vapor deposition. X-ray diffraction, Raman spectroscopy and low temperature cathodoluminescence are combined to accurately characterize the mosaicity, the density of dislocations and the residual strain within the films. X-ray diffraction and Raman results confirm a structural quality at the state-of-the-art according to the epitaxial relationship 〈100〉diamond(001)//〈100〉iridium(001)//〈100〉SrTiO3 (001). In addition, Raman and cathodoluminescence observations on cross-sections reveal the presence of local strain.

Highlights

  • Promising advances have been recently reported for the growth of diamond single crystals on large areas [1]

  • The objective of the present work is to provide a better understanding of the specific defects like dislocations and strain in heteroepitaxial diamond films grown on iridium/SrTiO3 (001)

  • The diamond film is still standing on the 5 × 5 mm2 Ir/SrTiO3 (001) substrate, which indicates that the residual strain of diamond film is low enough to avoid its spontaneous

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Summary

Introduction

Promising advances have been recently reported for the growth of diamond single crystals on large areas [1]. Iridium is up to now the best candidate to heteroepitaxially grow high quality diamond by the Chemical Vapor Deposition (CVD) technique. This behavior is related to a specific reactivity of iridium surface towards active species during Bias Enhanced Nucleation (BEN) [4] compared to other substrates like silicon [5] or silicon carbide [6,7]. Iridium epitaxial layers are currently deposited onto single crystal MgO, SrTiO3 or up-scalable substrates like YSZ (Yttria-stabilized zirconia)-buffered on silicon (001) [9]

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