Abstract
Thin films of Mn are grown on Si ( 1 1 1 ) - ( 3 × 3 ) : Bi- α . The film growth is epitaxial. Flat films with deep holes are observed. The film material is MnSi. The surface of the epitaxial MnSi films is modulated in height with a periodicity of about 200 Å due to the mismatch between the MnSi and the underlying Si(1 1 1) substrate. The observed modulation is clearly due to morphology since scanning tunneling microscopy and low-energy electron diffraction lead to consistent results. A likely growth model is discussed.
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