Abstract
The c-axis single-phase YBa2Cu3O7-δ films (δ = 0-0.15) on sapphire substrates prepared by the laser ablation technique and the band-pass stripline resonators for 34 GHz-range have been investigated. Increasing disorientation of mosaic block structure of YBa2Cu3O7-δ films is related to increasing surface resistance Rs at 135 GHz-range and decreasing unloaded quality factor Qo of linear stripline resonators. The linear dependence between the YBa2Cu3O7-δ film mosaicity (M) and half-width Bα1 of 00.13 reflecting component is determined. The reflection spreading is due to microstrains resulted mainly from the coherent adjustment of the YBa2Cu3O7-δ film lattice to GdBa2Cu3O7-δ sub-layer and sapphire substrate. Increasing number of the block characterized by a weak radial lattice adjustment (ΔΨ) is demonstrated by spreading of 00.13 reflection. It is found out that ΔΨ depends on the Bragg angle of reflection due to inhomogenity of YBa2Cu3O7-δ mosaic structure, which resulted from the gradual mosaicity decreasing with the depth.
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