Abstract
Thin films of have been prepared by chemical vapor deposition from molybdenum hexafluoride and hexamethyldisilthiane (HMDST). Continuous, adherent films were obtained at deposition temperatures in the range of 150° to 400°C on aluminum, nickel, silica, and alumina substrates. Infrared analyses indicate that deposition temperatures between 200° and 250°C produce the purest films. Growth rates in this temperature range are controlled by the reactant flow rates, and averaged 1000Å/min in this study. Four point resistivity measurements showed a minimum in film resistance (90 kΩ‐cm) at a deposition temperature of 230°C. The films were studied electrochemically in nonaqueous, secondary lithium cells. The best electrochemical performance was achieved on films deposited in the range of 210°C to 240°C, which corresponded to those films analytically determined to be . Four equivalents were discharged and three equivalents could be reversibly cycled at an average discharge voltage of 1.9V vs. lithium. Substantial capacity (≈2 equivalents) was maintained after 100 deep cycles (down to 1.0V vs. lithium) at a rate of 0.2 mA/cm2.
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