Abstract
This paper presents an efficient, highly responsive and highly repeatable MoS2/SiNWs heterostructure based photodetector. SiNWs samples were synthesized using metal assisted chemical etching and MoS2 nanoflakes were grown on SiNWs using wafer scalable processes. SiNWs, MoS2 and MoS2/SiNWs based devices were tested for photodetection performance in the visible region. The heterostructure interface between MoS2 and SiNWs helps to suppress dark current and enhance performance characteristics. The MoS2/SiNWs exhibits higher responsivity of 2.98 AW-1 at 450 nm illumination, which is 3 and 11 times higher than the SiNWs and MoS2 respectively. In addition, this heterojunction based device exhibits a higher detectivity of 2.7 × 1011 Jones and rise/fall time of 0.45/0.75 s. Moreover, the device fabrication method is simple and cost-effective. These results pave the way for the fabrication of scalable, highly repeatable and responsive miniaturized photodetectors based on MoS2/SiNWs for mass production.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
