Abstract
This paper presents an efficient, highly responsive and highly repeatable MoS2/SiNWs heterostructure based photodetector. SiNWs samples were synthesized using metal assisted chemical etching and MoS2 nanoflakes were grown on SiNWs using wafer scalable processes. SiNWs, MoS2 and MoS2/SiNWs based devices were tested for photodetection performance in the visible region. The heterostructure interface between MoS2 and SiNWs helps to suppress dark current and enhance performance characteristics. The MoS2/SiNWs exhibits higher responsivity of 2.98 AW-1 at 450 nm illumination, which is 3 and 11 times higher than the SiNWs and MoS2 respectively. In addition, this heterojunction based device exhibits a higher detectivity of 2.7 × 1011 Jones and rise/fall time of 0.45/0.75 s. Moreover, the device fabrication method is simple and cost-effective. These results pave the way for the fabrication of scalable, highly repeatable and responsive miniaturized photodetectors based on MoS2/SiNWs for mass production.
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