Abstract
Designing and preparing memristive materials with multilevel memristive switching characteristics is an effective strategy for improving the data storage capacity of devices. Herein, by grafting a ferrocene-containing polymer (PFMMA) from molybdenum disulfide nanosheets (MoS2 NSs) via polydopamine (PDA)-mediated surface-initiated atom transfer radical polymerization (SI-ATRP), we synthesized a novel two-dimensional nanomaterial, MoS2-PDA-PFMMA. The fabricated Al/MoS2-PDA-PFMMA/ITO sandwich-structured electronic device exhibited asymmetric multilevel resistive switching characteristics, which should give it a larger data storage capacity compared with traditional electrical bistable memristive devices. This work realized multilevel resistive switching in the device by material structure design, which opens up a new perspective for developing memristive devices with ultra-large data storage capacities.
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