Abstract
Thermal evaporation method was employed for deposition of MoS2/FeS2 thin film under vacuum conditions. Structural properties have been investigated using X-ray diffraction and Fourier transform infrared spectroscopy. Morphological and compositional studies have been done using field emission scanning electron scanning microscopy and energy dispersive spectroscopy. Temperature-dependent (90–363 K) and incident light intensity-dependent (280–1750 Lux) electrical properties of MoS2/FeS2 have been determined. Electrical analysis inferred the presence of more than one type of conduction mechanisms. Photodetection properties revealed that the fabricated device holds high detectivity (∼6.5 × 1012 Jones) and photoresponsivity (∼110 mA/W).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
