Abstract

This article presents the artificial synapse structures using a two-terminal MoS2 device for neuromorphic applications. The proposed multilayered MoS2 was fabricated using RF sputtering and thermal oxidation followed by sulfurization. The fabricated device was tested with various wavelengths in visible regions. At 450 nm wavelength, the device shows an improved response in comparison to other illuminated wavelengths. The experimental results show long-term potentiation and long-term depression characteristics. This behavior of the MoS2-based optoelectronic device replicates the functioning of a biological neuron. Further, to demonstrate neuromorphic image recognition, MoS2 was used as an artificial synapse in the spiking neural network. Thus, the proposed multilayered MoS2-based photonic device possesses great potential in the field of future neuromorphic applications. This way, we demonstrate a faster and low-powered optoelectronic device that mimics the human brain like computation and processing.

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