Abstract
A new low-medium-high step-modulation-doped-channel (LMH-SMDC) GaInP/GaAs high barrier gate heterosturcture field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped δ(p+)-GaInP layer is introduced to increase high gate turn-on and breakdown voltage and reduce the gate leakage current. A LMH-SMDC structure is used to improve the output current drivability and average transconductance. In addition, a LMH-SMDC metal-semiconductor field-effect transistor (MESFET) has also been fabricated for comparison. The studied devices show good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (fT) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.
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