Abstract
Biased above threshold ( V T), pulsed photocurrent ( u) measurements on windowed silicon Pd gate MOS capacitors are shifted (Δ V) negatively by H 2/N 2, whereas Au gates shift positively under NO 2/air. Below V T, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
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