MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

Abstract

Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01COX to > 10COX. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, EC–ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xOX.