Abstract
AbstractThe ligand N,N‐diisobutyl‐N′‐(4‐nitrobenzoyl)selenourea (4‐NO2‐C6H4CONHCSeNiBu2) (1) and its complex {bis[N,N‐diisobutyl‐N′‐(4‐nitrobenzoyl)selenoureato]lead(II)} [(4‐NO2‐C6H4CONHCSeNiBu2)PbII] (2) have been synthesized, and their structures determined by single‐crystal X‐ray methods. Compound 2 was employed as a single‐source precursor (SSP) for the deposition of PbSe thin films by aerosol‐assisted chemical vapor deposition (AACVD) in the temperature range 250–500 °C on glass substrates. The films obtained at low temperature consist of globular‐shaped crystallites, whereas at higher temperature (ca. 500 °C) wirelike morphologies are dominant. PbSe nanocrystals were also prepared from compound 2 by solution thermolysis at 200–250 °C. Photoluminescence (PL) life time measurements based on the time‐correlated single‐photon‐counting (TCSPC) technique showed significantly faster PL decay in as‐prepared PbSe nanocrystals relative to previous reports. The purity and elemental composition of the as‐deposited PbSe thin films and nanocrystals were determined by energy‐dispersive X‐ray analysis (EDX).
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