Abstract
Flower-like (waterlily) GaN nanostructures comprising sharp tip petals as building blocks have been synthesized on Si (100) substrate by chemical vapor deposition (CVD) technique without using any catalyst. The obtained nano-structures have been characterized by FESEM, XRD, EDS, TEM and HRTEM. The measured sharp tip angle of the petals of the nanostructures is almost 50° which has key role in admirable field emission properties. The flower-like GaN nanostructures have exhibited amazing lower turn-on field value of 3.25 Vμm−1 (10 μAcm−2) at room temperature with insignificant field emission current fluctuation portraying its high stability. Importantly, this turn-on field value is low enough for utilization in field emission devices.
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