Abstract
For Si–ZnO heterostructures, prepared by magnetron sputtering, the interface morphology is studied by XPS and UPS. ZnO films on Si(1 1 1) surfaces (H-termination and 7 × 7) were prepared by magnetron sputtering and metal organic molecular beam epitaxy (MOMBE) and are investigated in well defined deposition steps and the interface properties were studied in situ. All samples were handled in situ under ultra high vacuum (UHV) conditions. Up to five different interface phases were detected depending on ZnO preparation. Beside a SiO x film induced by the sputter process, ZnO and Zn 2SiO 4 phases are resolved. In addition hydrogen, appearing as Zn OH x , is found in considerable concentrations in the films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
