Abstract
Visible luminescence observed from the nanoporous layer of the two (100)-orinted low doped and highly doped PEC-etched n-type Si is explained as being due to the existence of single crystal silicon quantum wires within their structure. The nanometer-size tangled Si structure is contained and attached to a regular geometric Si macroarray. TEM studies also reveal subtle variations in morphology between the two layers studied, which could explain the blueshift in the spectrum of the low-doped specimen — thinner and more rigid irregular wires — as compared to the highly doped specimen.
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