Abstract
The evolution of the surface morphology of ordered, self-organized Ge nanodots samples by sputtering with various Ar+ ion energy and density has been investigated. Under low (300eV) ion energy irradiation the surface smoothing mechanism dominates surface relaxation processes. The result indicates that ion sputtering with low ion energy can be utilized as an effective method for the preparation of ultra-smooth surfaces. In addition, with medium ion energy (650eV) irradiation, the Ge nanodots transform into pure Si dots with the same shape characteristics as the unsputtered nanodots.
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