Abstract
AbstractNanoscale patterned sapphire substrates (NPSS) were fabricated through nanoimprint lithography (NIL) technology and etching treatment. With optimized growth conditions, high‐quality GaN epilayers were epitaxially grown by commercial metal organic chemical vapor deposition (MOCVD) system. Structural and optical properties were studied. Better imprint stamp as well as faster transition between different growth modes during lateral epitaxial growth were found to be two important factors that improve the crystal quality and reduce the density of the defects. A new kind of irregular circular mesas was observed with random distribution, which may come from accelerated growth by template imperfection. Considering the evolution of pattern size and density, possible origin of such structure has been proposed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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