Abstract
AbstractThe evolution of GaN nano‐pyramid growth by selective area metalorganic vapor phase epitaxy (SA‐MOVPE) on GaN/c‐plane sapphire templates with extremely low pattern fill factor and large inter‐hole spacing was studied with scanning electron microscopy (SEM). The optical nanostructure characteristics were investigated by micro‐photoluminescence spectroscopy at room temperature. It was found that sub‐100 nm structures can be fabricated by controlling the growth time and mask opening size. Single nanostructures exhibit more intense luminescence and a red shift of the band edge transition compared to the GaN layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
