Abstract
In this work, high quality boron-oxygen co-doped homoepitaxial diamond has been proposed. The morphology of diamond was smooth and flat with the O2/H2 ratios less than 1%. The X-ray diffraction, Photoluminescence and Raman spectroscopy illustrated that the substitution of oxygen into diamond lattice could inhibit nitrogen related defects and improve the crystallinity. The Raman mapping showed that tensile stress were formed from film surface to substrate. Under the O2/H2 ratio of 1%, the mobility of 892 cm2/V·s at boron concentration of 4.7 × 1017 cm−3 were obtained, which showed decent electrical properties.
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