Abstract
Controlled synthesis of one-dimensional materials, such as nanowires and nanobelts, is ofvital importance for achieving the desired properties and fabricating functional devices. Wereport a systematic investigation of the vapor transport growth of one-dimensionalSnO2 nanostructures, aiming to achieve precise morphology control.SnO2 nanowires areobtained when SnO2 mixed with graphite is used as the source material; addingTiO2 into the source reliably leads to the formation of nanobelts. Ti-inducedmodification of crystal surface energy is proposed to be the origin of themorphology change. In addition, control of the lateral dimensions of bothSnO2 nanowires(from ∼15 to∼115 nm in diameter)and nanobelts (from ∼30 nm to ∼2 µm in width) is achieved by adjusting the growth conditions. The physical properties ofSnO2 nanowires and nanobelts are further characterized and compared using roomtemperature photoluminescence, resonant Raman scattering, and field emissionmeasurements.
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