Abstract
Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH4/H2/B(OCH3)3 gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH3)3 had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH3)3, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×1019cm-3 to a maximum of 2.4×1021cm-3, estimated from the Raman spectra. DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12923
Highlights
Boron-doped diamond (BDD) possesses unusual physical and chemical properties, such as high hardness, a very wide range of electrochemical potential and low voltammetric background current in an aqueous medium, corrosion stability, et al, that identify it as an interesting material for electrochemical applications [1, 2]
Though the deposition and properties of BDD films have been discussed by many researchers in microwave plasma assisted chemical vapor deposition (MPCVD) and hot filament chemical vapor deposition (HFCVD) systems [5, 6], they were rarely been investigated thoroughly for the deposition in hot cathode direct current plasma chemical vapour deposition (HCDC-PCVD) systems
Boron-doped diamond (BDD) films were grown using hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) with a CH4/H2/B(OCH3)3 gas mixture with flux varying from 4/200/1 sccm to 4/200/20sccm
Summary
Boron-doped diamond (BDD) possesses unusual physical and chemical properties, such as high hardness, a very wide range of electrochemical potential and low voltammetric background current in an aqueous medium, corrosion stability, et al, that identify it as an interesting material for electrochemical applications [1, 2]. The doping of boron can alter the characteristics of the diamond film such as crystal morphology, quality, microstructure, Raman spectrum property and the amount of non-diamond impurities [4]. Though the deposition and properties of BDD films have been discussed by many researchers in microwave plasma assisted chemical vapor deposition (MPCVD) and hot filament chemical vapor deposition (HFCVD) systems [5, 6], they were rarely been investigated thoroughly for the deposition in hot cathode direct current plasma chemical vapour deposition (HCDC-PCVD) systems. It is still necessary to study the morphology, structure, bonding behavior and electrochemical characterization of BDD in HCDC-PCVD systems. The effects of boron doping on the structural characteristics of the diamond films were characterized by SEM and Raman spectroscopy.
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