Abstract
The surface structure of silicon single crystals grown in the [111] direction using the floating zone technique and the distribution of electric parameters of these crystals over the crystal length are investigated. Geometrical parameters of the morphological characteristics of deltoidal icositetrahedral habit are determined. It is demonstrated that, similarly to ridgelike protrusions, bulges are morphological elements of the ingot surface that characterize the rhombododecahedral and deltoidal icositetrahedral growth habits. It is established that, in the region of bulges, the nonequilibrium charge carriers lifetime distribution is more inhomogeneous due to instability of the crystallization rate.
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