Abstract
Porous GaAs layers obtained by electrochemical etching were investigated using SEM, TEM and optical methods. The morphology, chemical composition and photoluminescence of porous layers were investigated. It was shown that porous layer consists of Ga 2O 3, As 2O 3, As 2O 5 and GaAs submicron grains. Photoluminescence spectra of investigated porous layers consist of “infrared” and “green” spectral structures. The observed short wavelength photoluminescence (PL) at 590–778 nm of the porous layer is explained by the quantum size effect in the GaAs nanocrystals.
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