Abstract
Morphology and near-band-edge emission properties of ZnO grown on R-plane sapphire are studied. It is shown that preliminarily deposited thin Ag layer catalyzes the growth of vertically aligned labyrinth-like ZnO nanowalls with the (110) crystallographic orientation. Room-temperature photoluminescence of ZnO nanowalls is more than two times stronger than that of ZnO grown on bare sapphire. Random lasing with rather low thresholds is excited in ZnO nanowalls.
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