Abstract
V-shaped pits (V-defects) were observed in semipolar (112̄2)-oriented InGaN/GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). The pit morphology was that of inverted rhombic or trigonal pyramids aligned along the in-plane [11̄00] direction. Pit facet orientations were identified. The surface pits were found to be connected at their apex to mixed type a+ c threading dislocations with large screw components. Such dislocations exhibited [112̄0] average line directions with zig-zag 〈101̄0〉 local lines, and they also induced V-defects at the InGaN/GaN interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
